A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate-Reference-Cited by-同舟云学术

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A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Published:2022-02-01 Issue:2 Volume:12 Page:025012
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Yang¹^ORCID,Lv Yuanjie²^ORCID,Zhou Heng¹^ORCID,Lin Zhaojun¹^ORCID,Yang Yongxiong¹,Jiang Guangyuan¹,Zhou Yan¹,Wang Mingyan¹

Affiliation:

1. School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan 250101, China

2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0083513

Reference24 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

3. High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application

4. High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

5. Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors;Solid-State Electronics;2024-02

2. Study on the frequency characteristics of split-gate AlGaN/GaN HFETs;Modern Physics Letters B;2023-10-30

3. Study of electrical transport properties of GaN-based side-gate heterostructure transistors;Applied Physics Letters;2022-11-21

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