Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369621
Reference9 articles.
1. AlGaN-GaN heterostructure FETs with offset gate design
2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
3. Self-heating in high-power AlGaN-GaN HFETs
4. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
5. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
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