Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions-Reference-Cited by-同舟云学术

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Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Published:2003-03-15 Issue:6 Volume:93 Page:3674-3676
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Takahashi Tomonori,Fukatsu Shigeto,Itoh Kohei M.,Uematsu Masashi,Fujiwara Akira,Kageshima Hiroyuki,Takahashi Yasuo,Shiraishi Kenji

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1554487

Reference14 articles.

1. General Relationship for the Thermal Oxidation of Silicon

2. Point defects, diffusion processes, and swirl defect formation in silicon

3. Oxidation and the structure of the silicon/oxide interface

4. Interactions of silicon point defects with SiO2films

5. First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces

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