Oxidation and the structure of the silicon/oxide interface
Author:
Affiliation:
1. a Theoretical Physics Division , Harwell Laboratory , Didcot , Oxon , OX11 ORA , England
2. b Department of Metallurgy and Science of Materials , University of Oxford , Parks Road, Oxford , OX1 3PH , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708211203
Reference18 articles.
1. Strain broadening of the dangling-bond resonance at the (111)Si-SiO2interface
2. Low-pressure oxidation of silicon stimulated by low-energy electron bombardment
3. Oxidation of silicon: strain and linear kinetics
4. Stress in thermal SiO2during growth
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