Interactions of silicon point defects with SiO2films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351328
Reference51 articles.
1. On the Kinetics of the Thermal Oxidation of Silicon: I . A Theoretical Perspective
2. Interstitial Kinetics Near Oxidizing Silicon Interfaces
3. Effect of Back‐Side Oxidation on B and P Diffusion in Si Directly Masked with Si3 N 4 Films
4. Theoretical model for self‐interstitial generation at the Si/SiO2interface during thermal oxidation of silicon
5. The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon
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