Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon-Reference-Cited by-同舟云学术

Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon

Published:1989-02-13 Issue:7 Volume:54 Page:620-622
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dimitriadis C. A.,Coxon P. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.100897

Reference21 articles.

1. Determination of gap state density in polycrystalline silicon by field‐effect conductance

2. High‐performance thin‐film transistors from optimized polycrystalline silicon films

3. Material properties and characteristics of polysilicon transistors for large area electronics

4. Low defect-density polycrystalline silicon for high performance thin film transistors

5. Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon

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