Effect of dopant on metal induced lateral crystallization rate-Reference-Cited by-同舟云学术

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Effect of dopant on metal induced lateral crystallization rate

Published:2015-08 Issue: Volume:589 Page:735-740
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Hyung Yoon,Lee Yong Woo,Park Jae Hyo,Chae Hee Jae,Joo Seung Ki

Funder

Samsung Corning Precision Materials Co.

Eui-San Research Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Understanding of metal-induced lateral crystallization mechanism — a low temperature crystallization phenomenon;Joo;Electron. Mater. Lett.,2005

2. Studies on the formation of source and drain in low temperature polycrystalline silicon thin film transistors;Lee;Curr. Appl. Phys.,2013

3. Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon;Dimitriadis;Appl. Phys. Lett.,1989

4. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor de position from Si2H6 gas;Nakazawa;J. Appl. Phys.,1991

5. Recrystallization of amorphized polycrystalline silicon films on SiO2: temperature dependence of the crystallization parameters;Iverson;J. Appl. Phys.,1987

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1. Toward TCO‐Free Silicon Heterojunction Solar Cells: Effect of TCO Layers in Electrical Transport and Stability;Solar RRL;2023-07-21

2. Room temperature fabrication of poly-crystalline Si thin films via Al-induced crystallization under 500 keV Xe⁺ ion irradiation;Journal of Applied Physics;2022-09-07

3. Perspectives on metal induced crystallization of a-Si and a-Ge thin films;RSC Advances;2022

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