Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon-Reference-Cited by-同舟云学术

Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon

Published:1988-05 Issue:5 Volume:57 Page:573-586
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Fortunato G.¹²,Meakin D. B.¹,Migliorato P.¹,Le Combers P. G.¹³

Affiliation:

1. a GEC Research Limited, Hirst Research Centre , East Lane, Wembley , Middlesex , HA9 7PP , England

2. b Istituto di Elettronica della Stato Solido del CNR , Via Cineto Romano 42, 00156 , Roma , Italy

3. c Carnegie Laboratory of Physics , University of Dundee , Dundee , Scotland

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808211229

Reference18 articles.

1. Bryer , N. Coxon , P. Fortunato , G. Kean , R. Meakin , D. Micliorato , P. Rundle , P. and Urwin , M. Proceedings of the 6th International Display Research Conference Tokyo. pp.80

2. Depp , S. W. Juliana , A. and Huth , P. G. Proceedings of the International Electron Devices Meeting. pp.103

3. Grain boundary states and the characteristics of lateral polysilicon diodes

4. Determination of gap state density in polycrystalline silicon by field‐effect conductance

5. Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors

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