Photoluminescence and Raman scattering studies of 2 MeV Yb+‐implanted InP as a function of etching depth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363073
Reference31 articles.
1. Recoil contribution to ion‐implantation energy‐deposition distributions
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3. A systematic analysis of defects in ion-implanted silicon
4. Is the End-of-Range Loops Kinetics Affected by Surface Proximity or Ion Beam Recoils Distribution?
5. Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si
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1. Investigation of the lateral spread of Er ions implanted in 6H-SiC;Acta Physica Sinica;2010
2. Size dependant electronic structure from InP nano-dots;Vacuum;2009-12
3. Micro-Raman and micro-infrared spectroscopic studies of Pb- and Au-irradiatedZrSiO4: Optical properties, structural damage, and amorphization;Physical Review B;2008-04-22
4. Photoluminescence and Raman characterization from Er-implanted In x Ga 1-x As bulk crystal;SPIE Proceedings;2008-02-07
5. Effects of Yb impurity on Er-related emission in Al0.70Ga0.30As:Er,Yb epitaxially grown on GaAs substrate;physica status solidi (a);2008-01
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