Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si-Reference-Cited by-同舟云学术

Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si

Published:1982-12 Issue:6 Volume:46 Page:611-633
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Sadana D. K.¹,Washburn J.¹,Booker G. R.²

Affiliation:

1. a Lawrence Berkeley Laboratoryand the Department of Materials Science and Mineral Engineering , University of California , Berkeley , California , 94720 , U.S.A.

2. b Department of Metallurgy and Materials Science , University of Oxford , Oxford , OX1 3PH, England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418638208223548

Reference31 articles.

1. Weak-beam observation of dislocation loops in silicon

2. Chadderton , L. T. 1965. Radiation Damage in Crystals, 82–113. New York: John Wiley.

3. On the annealing of damage produced by boron ion implantation of silicon single crystals

4. An experimental determination of the electrical resistivity of stacking faults and lattice vacancies in gold

5. The distribution of damage produced by ion implantation of silicon at room temperature

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