Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si

Author:

Sadana D. K.1,Washburn J.1,Booker G. R.2

Affiliation:

1. a Lawrence Berkeley Laboratoryand the Department of Materials Science and Mineral Engineering , University of California , Berkeley , California , 94720 , U.S.A.

2. b Department of Metallurgy and Materials Science , University of Oxford , Oxford , OX1 3PH, England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

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