The distribution of damage produced by ion implantation of silicon at room temperature-Reference-Cited by-同舟云学术

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The distribution of damage produced by ion implantation of silicon at room temperature

Published:1970-01 Issue:1 Volume:6 Page:63-75
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Crowder B. L.,Title R. S.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577008235047

Reference24 articles.

1. Sigmund, P. and Sanders, J. B. Proc. Int'l. Conf. on Applications of Ion Beams to Semiconductor Technology. Grenoble. Edited by: Glotin, P. pp.215 editions Ophyrys

2. Nature of Bombardment Damage and Energy Levels in Semiconductors

3. Hall Effect and Conductivity in Porous Media

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31

2. Nonequilibrium point defects and diffusion in silicon;Materials Science and Engineering: R: Reports;1994-10-15

3. On the role of fluorine in BF2+ implanted silicon;Solid-State Electronics;1992-04

4. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08

5. Effect of argon implantation on the activation of boron implanted in silicon;Applied Physics Letters;1983-05-15

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