Author:
Qin Xi-Feng ,Wang Feng-Xiang ,Liang Yi ,Fu Gang ,Zhao You-Mei ,
Abstract
It is very important to consider the distribution of range, range straggling and lateral spread of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. Er ions with energy of 400 keV were implanted in 6H-SiC crystal samples under the angles of 0°, 45° and 60°, respectively. The lateral spread of Er ions with dose of 5×1015 cm-2 at energy of 400 keV implanted in 6H-SiC crystal were measured by Rutherford backscattering technique. The measured lateral spread is compared with TRIM98 and SRIM2006 codes prediction. It is seen that the experimental lateral spread well justifies the theoretical values. The value from TRIM98 agrees somewhat better to the experimental data than the value obtained based on SRIM2006.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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