Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106052
Reference16 articles.
1. 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
2. Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy
3. Large reflectivity modulation using InGaAs-GaAs
4. Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure
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1. Improved Performance of 2.2-$\mu{\rm m}$ InAs/InGaAs QW Lasers on InP by Using Triangular Wells;IEEE Photonics Technology Letters;2014-03
2. Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy;Chinese Physics Letters;2008-02
3. Ground State of a Polaron in a Symmetric Triangular Quantum Well;Chinese Physics Letters;2006-07-21
4. Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure;Journal of Applied Physics;1997-01
5. Temperature Dependence of Quantized States in a GaAs/Al0.23Ga0.77As Asymmetric Triangular Quantum Well Heterostructure;Japanese Journal of Applied Physics;1996-06-15
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