Temperature Dependence of Quantized States in a GaAs/Al0.23Ga0.77As Asymmetric Triangular Quantum Well Heterostructure-Reference-Cited by-同舟云学术

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Temperature Dependence of Quantized States in a GaAs/Al0.23Ga0.77As Asymmetric Triangular Quantum Well Heterostructure

Published:1996-06-15 Issue:Part 1, No. 6A Volume:35 Page:3576-3582
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Der-Yuh,Li Chi-Feng,Huang Ying-Sheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy;Chinese Physics Letters;2008-02

2. Influence of Al content on temperature dependence of excitonic transitions in quantum wells;The European Physical Journal B;2001-05

3. Temperature dependence of excitonic transitions in AlxGa1−xAs/GaAs quantum wells;Superlattices and Microstructures;2001-03

4. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001

5. Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures;Solid State Communications;2000-09

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