Temperature dependence of excitonic transitions in AlxGa1−xAs/GaAs quantum wells-Reference-Cited by-同舟云学术

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Temperature dependence of excitonic transitions in AlxGa1−xAs/GaAs quantum wells

Published:2001-03 Issue:3 Volume:29 Page:225-231
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Lourenço S.A.,Dias I.F.L.,Duarte J.L.,Laureto E.,Iwamoto H.,Meneses E.A.,Leite J.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Device and Circuit Applications of III–V Semiconductor Superlattice and Modulation Doping;Miller,1985

2. Quantum Wells for Photonics

3. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

4. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=

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1. Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures;Optical Materials;2019-03

2. Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells;Journal of Physics: Condensed Matter;2011-07-25

3. Effects of confinement on the electron–phonon interaction in Al0.18Ga0.82As/GaAs quantum wells;Journal of Physics: Condensed Matter;2009-03-17

4. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/AlxGa1−xAs quantum wells;Journal of Physics: Condensed Matter;2008-05-27

5. Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation;Journal of Applied Physics;2007-06

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