Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/23/i=32/a=325801/pdf
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1. High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
2. 14-GHz GaNAsSb Unitraveling-Carrier 1.3-$\mu\hbox{m}$ Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy
3. DC Performance of High-Quantum-Efficiency 1.3-$\mu \hbox{m}$ GaNAsSb/GaAs Waveguide Photodetector
4. Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs
5. 1550 nm GaInNAsSb distributed feedback laser diodes on GaAs
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