Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy

Published:2008-02 Issue:2 Volume:25 Page:726-729
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Yi Gu,Yong-Gang Zhang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/25/2/101/pdf

Reference27 articles.

1. Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers

2. Continuous Wave Performance and Tunability of MBE Grown 2.1 μm InGaAsSb/AlGaAsSb MQW lasers

3. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm

4. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

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