Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103835
Reference10 articles.
1. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
2. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
3. Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure
4. Molecular Beam Epitaxical Growth of AlxGa1-xAs on non- Planar Patterned GaAs (100)
5. Growth of InxGa1−xAs on patterned GaAs(100) substrates
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1. Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry;Journal of Applied Physics;2001-06
2. Analysis of strained InGaAs/GaAs multi-quantum-well waveguide defined by ion implantation;Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368);1998
3. Saturation intensity and time response of InGaAs-InGaP MQW optical modulators;IEEE Journal of Quantum Electronics;1995
4. High‐efficiency laser oscillation of a microcavity laser excited by resonant optical pumping;Applied Physics Letters;1994-09-26
5. Defect and strain redistribution in InxGa1−xAs/GaAs multiple quantum wells studied by resonant Raman scattering;Applied Physics Letters;1993-09-27
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