Theoretical study of polarization-doped GaN-based light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3565173
Reference15 articles.
1. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
2. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
3. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer
4. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
5. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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