Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer-Reference-Cited by-同舟云学术

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

Published:2010-09-29 Issue:19 Volume:35 Page:3285
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Kuo Yen-Kuang,Chang Jih-Yuan,Tsai Miao-Chan

Funder

National Science Council of Taiwan (NSCT)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference17 articles.

1. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

2. On carrier spillover in c- and m-plane InGaN light emitting diodes

3. Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes

4. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

5. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

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