On carrier spillover in c- and m-plane InGaN light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3266833
Reference13 articles.
1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
4. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
5. Auger recombination in InGaN measured by photoluminescence
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