Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates-Reference-Cited by-同舟云学术

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Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Published:2021-12-20 Issue:25 Volume:119 Page:252101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liang Zhiwen¹,Du Hanghai²,Yuan Ye³^ORCID,Wang Qi¹^ORCID,Kang Junjie³,Zhou Hong²^ORCID,Zhang Jincheng²,Hao Yue²,Wang Xinqiang¹³⁴^ORCID,Zhang Guoyi¹

Affiliation:

1. Dongguan Institute of Opto-Electronics Peking University, Dongguan, China

2. School of Microelectronics, Xidian University, Xian, Shanxi, China

3. Songshan Lake Materials Laboratory, Dongguan, Guangdong, China

4. School of Physics, Peking University, Beijing, China

Funder

Special Project for Research and Development in Key areas of Guangdong Province

Guangdong Basic and Applied Basic Research Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0074453

Reference35 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. GaN power devices: current status and future challenges

3. High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

4. Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

5. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

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1. Exploring Inorganic Flexible Electronics: III‐Nitride Light‐Emitting Diode Epilayers on Wafer‐Scale Exfoliable Mica Substrate;Advanced Electronic Materials;2024-08-12

2. High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 nm Ultra-Thin Buffer and Al₂O₃/SiO₂ Passivation;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique;IEEE Electron Device Letters;2024-02

4. Influence of sputtered AlN buffer on GaN epilayer grown by MOCVD;Journal of Physics D: Applied Physics;2022-12-13

5. Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD;Ceramics International;2022-12

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