Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal-Reference-Cited by-同舟云学术

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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Published:2010-09-13 Issue:11 Volume:97 Page:113501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Visalli Domenica,Van Hove Marleen,Srivastava Puneet,Derluyn Joff,Das Johan,Leys Maarten,Degroote Stefan,Cheng Kai,Germain Marianne,Borghs Gustaaf

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3488024

Reference14 articles.

1. High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

2. AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

3. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

4. Proceedings of the IEEE 20th International Symposium Power Semiconductor Devices;Ikeda N.,2008

5. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

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