A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3599707
Reference16 articles.
1. Complementary resistive switches for passive nanocrossbar memories
2. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
3. Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
4. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
5. (In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array
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