Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO<sub>2</sub> on Anatase TiO<sub>2</sub>(101)-Reference-Cited by-同舟云学术

Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO₂ on Anatase TiO₂(101)

Published:2022-07-14 Issue:29 Volume:126 Page:12210-12221
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

D’Acunto Giulio¹²^ORCID,Jones Rosemary¹²^ORCID,Pérez Ramírez Lucía³^ORCID,Shayesteh Payam¹²,Kokkonen Esko²^ORCID,Rehman Foqia¹²,Lim Florence³,Bournel Fabrice³⁴^ORCID,Gallet Jean-Jacques³⁴,Timm Rainer¹²^ORCID,Schnadt Joachim¹²^ORCID

Affiliation:

1. Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, Box 118, Lund 221 00, Sweden

2. MAX IV Laboratory, Lund University, Box 118, Lund 221 00, Sweden

3. CNRS Laboratoire de chimie physique-Matière et rayonnement, Sorbonne Université, 4 place Jussieu, Paris 75005, France

4. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex 91192, France

Funder

Svenska Forskningsr?det Formas

Vetenskapsr?det

VINNOVA

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c02683

Reference61 articles.

1. International Technology Roadmap for Semiconductors (ITRS) More Moore. ITRS 2015, 1 −52.

2. A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

3. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

4. TaO x -based resistive switching memories: prospective and challenges

5. Super high-dielectric-constant oxide films for next-generation nanoelectronics and supercapacitors for energy storage

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HfO₂ Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer;Chemistry of Materials;2024-04-15

2. Operando study of HfO2 atomic layer deposition on partially hydroxylated Si(111);Journal of Vacuum Science & Technology A;2024-02-28

3. Towards modeling of ZrO2 atomic layer deposition at reactor scale based on experimental kinetic approximation;Applied Surface Science;2024-02

4. Time evolution of surface species during the ALD of high-k oxide on InAs;Surfaces and Interfaces;2023-07

5. Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors;Applied Surface Science;2023-07