Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory-Reference-Cited by-同舟云学术

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Published:2009-05-22 Issue:10 Volume:19 Page:1587-1593
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lee Myoung-Jae,Kim Sun I.,Lee Chang B.,Yin Huaxiang,Ahn Seung-Eon,Kang Bo S.,Kim Ki H.,Park Jae C.,Kim Chang J.,Song Ihun,Kim Sang W.,Stefanovich Genrikh,Lee Jung H.,Chung Seok J.,Kim Yeon H.,Park Youngsoo

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Nanoionics-based resistive switching memories

2. Quantized conductance atomic switch

3. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

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