Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations-Reference-Cited by-同舟云学术

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Published:2019-09-23 Issue:13 Volume:115 Page:132102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sometani Mitsuru¹^ORCID,Hosoi Takuji²,Hirai Hirohisa¹^ORCID,Hatakeyama Tetsuo¹^ORCID,Harada Shinsuke¹^ORCID,Yano Hiroshi³^ORCID,Shimura Takayoshi²^ORCID,Watanabe Heiji²,Yonezawa Yoshiyuki¹^ORCID,Okumura Hajime¹^ORCID

Affiliation:

1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

2. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

3. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5115304

Reference24 articles.

1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices