A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3358140
Reference16 articles.
1. Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices
2. Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks
3. Injection‐level dependent surface recombination velocities at the silicon‐plasma silicon nitride interface
4. Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation
5. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
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4. Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition;IEEE Journal of Photovoltaics;2018-11
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