Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1861138
Reference31 articles.
1. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
2. The roles of electric fields and illumination levels in passivating the surface of silicon solar cells
3. Calculation of surface generation and recombination velocities at the Si‐SiO2interface
4. Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination
5. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
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