Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide-Reference-Cited by-同舟云学术

Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

Published:2001-04 Issue:7 Volume:89 Page:3821-3826
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kerr M. J.,Schmidt J.,Cuevas A.,Bultman J. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1350633

Reference6 articles.

1. Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency

2. Surface recombination velocity of highly dopedn‐type silicon

3. Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

4. The effect of emitter recombination on the effective lifetime of silicon wafers

5. Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide

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