Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride-Reference-Cited by-同舟云学术

Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

Published:2001-01 Issue:1-4 Volume:65 Page:585-591
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Schmidt Jan,Kerr Mark

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Progress in Low-temperature Surface Passivation of Silicon Solar Cells using Remote-plasma Silicon Nitride

2. Low temperature surface passivation for silicon solar cells

3. J. Schmidt, T. Lauinger, A.G. Aberle, R. Hezel, Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington, 1996, IEEE, Piscataway, NJ, 1996, p. 413.

4. T. Lauinger, A.G. Aberle, R. Hezel, Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, 1997, Stephens, Bedford, 1997, p. 853.

5. Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces

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