Wide range doping control and defect characterization of GaN layers with various Mg concentrations
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5045257
Reference46 articles.
1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
3. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
4. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
5. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
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