Author:
Fu Shasha 付莎莎,Xiao Qingquan 肖清泉,Tang Huazhu 唐华著,Yao Yunmei 姚云美,Zou Mengzhen 邹梦真,Ye Jianfeng 叶建峰,Xie Quan 谢泉
Publisher
Shanghai Institute of Optics and Fine Mechanics
Reference52 articles.
1. Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe;M E Levinshtein,2001
2. Gallium nitride as an electromechanical material;A Ansari;Journal of Microelectromechanical Systems,2014
3. Improving GaN-on-silicon properties for GaN device epitaxy;J Bläsing;Physica Status Solidi C,2011
4. Properties of GaN and related compounds studied by means of Raman scattering;H Harima;Journal of Physics: Condensed Matter,2002
5. GaN and related materials II;S J Pearton,2000