Model for dielectric growth on silicon in a nitrous oxide environment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108633
Reference6 articles.
1. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
2. Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O ambient
3. Improved reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O
4. Growth kinetics of ultrathin SiO2films fabricated by rapid thermal oxidation of Si substrates in N2O
5. Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics
Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Nitrogen on Diffusion in Silicon Oxynitride;Japanese Journal of Applied Physics;2005-11-09
2. Reoxidation Behavior of High-Nitrogen Oxynitride Films after O2and N2O Treatment;Japanese Journal of Applied Physics;2005-05-10
3. Comment on “Growth kinetics of oxides during furnace oxidation of silicon in N2O ambient” [J. Appl. Phys. 78, 2767 (1995)];Journal of Applied Physics;2004-02-15
4. Thermal oxidation of silicon nanocrystals in O2 and NO ambient;Journal of Applied Physics;2003-05
5. Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon;Journal of Applied Physics;2000-02
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