Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372048
Reference51 articles.
1. Highly Reliable Thin Nitrided SiO2Films Formed by Rapid Thermal Processing in an N2O Ambient
2. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
3. Degradation of oxynitride gate dielectric reliability due to boron diffusion
4. Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2interface electrical characteristics
5. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics;Applied Surface Science;2016-11
2. Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs;Materials Science Forum;2014-02
3. Atomic state and characterization of nitrogen at the SiC/SiO2 interface;Journal of Applied Physics;2014-01-21
4. Improved memory performance of metal—oxide—nitride—oxide—silicon by annealing the SiO2tunnel layer in different nitridation atmospheres;Journal of Semiconductors;2013-11
5. Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001);Physical Review B;2011-03-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3