Growth kinetics of ultrathin SiO2films fabricated by rapid thermal oxidation of Si substrates in N2O
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349701
Reference12 articles.
1. CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT
2. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
3. The Growth and Characterization of Very Thin Silicon Dioxide Films
4. Thin SiO2insulators grown by rapid thermal oxidation of silicon
5. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
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