Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O ambient
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19900966?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Lai, S.K., Lee, J., and Dham, V.K.: ‘Electrical Properties of nitrided-oxide systems for use in gate dielectrics and EEPROM’, IEEE IEDM Tech. Dig., 1983), p. 190–193
2. Fukuda, H., Arakawa, T., and Ohno, S.: ‘Highly reliable ultra-thin SiO2films formed by rapid thermal processing’, IEEE IEDM Tech Dig., 1989), p. 451–454
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