Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98717
Reference11 articles.
1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
2. Transient capacitance studies of an electron trap at Ec−ET = 0.105 eV in phosphorus‐doped silicon
3. Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs
4. New vacancy-related defects inn-type silicon
5. Configurationally multistable defect in silicon
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