Transient capacitance studies of an electron trap at Ec−ET = 0.105 eV in phosphorus‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331459
Reference12 articles.
1. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
2. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
4. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
5. Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon
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