Comment on “Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles” [J. Appl. Phys. 123, 161421 (2018)]
Author:
Affiliation:
1. Technische Universität Dresden, 01062 Dresden, Germany and Tomsk State University, 634050 Tomsk, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5040456
Reference13 articles.
1. EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon
2. Origin of the 0.97 eV luminescence in irradiated silicon
3. Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair
4. The optical properties of luminescence centres in silicon
5. Local vibrational modes of the metastable dicarbon center(Cs–Ci)in silicon
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1. Response to “Comment on ‘Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles’” [J. Appl. Phys. 124, 086101 (2018)];Journal of Applied Physics;2018-08-28
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