Configurationally multistable defect in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96669
Reference9 articles.
1. The Interactions of Point Defects with Impurities in Silicon
2. Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence
3. The role of oxygen in irradiated arsenic‐doped silicon
4. Electronically controlled metastable defect reaction in InP
5. MFecenter: A configurationally bistable defect in InP: Fe
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