Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon
Author:
Affiliation:
1. Institute of Microelectronics Technology RAS142432ChernogolovkaRussia
2. Scientific‐Practical Materials Research Center of NAS of Belarus220072MinskBelarus
3. Technische Universität Dresden01062DresdenGermany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201800651
Reference19 articles.
1. Electrical properties and recombination activity of copper, nickel and cobalt in silicon
2. Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current
3. Nickel: A very fast diffuser in silicon
4. Evidence for room-temperature in-diffusion of nickel into silicon
5. Nickel in silicon: Room‐temperature in‐diffusion and interaction with radiation defects
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nucleation of Nickel Disilicide Precipitates in Float‐Zone Silicon: The Role of Vacancies;physica status solidi (a);2022-07-14
2. Electrical Activation of Interstitial Ni in Cu‐Doped Si;physica status solidi (a);2021-05-07
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