Nickel in silicon: Room‐temperature in‐diffusion and interaction with radiation defects
Author:
Affiliation:
1. Institute of Microelectronics Technology RAS142432ChernogolovkaRussia
2. Technische Universität Dresden01062DresdenGermany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700005
Reference11 articles.
1. Ti, Fe, and Ni in Si and their interactions with the vacancy and theAcenter: A theoretical study
2. Nickel: A very fast diffuser in silicon
3. Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon
4. Identification of copper-copper and copper-hydrogen complexes in silicon
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1. Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study;physica status solidi (a);2019-07-22
2. Electrically Active Copper–Nickel Complexes in p‐Type Silicon;physica status solidi (a);2019-06-04
3. Identification of colloidal silica polishing induced contamination in silicon;Materials Characterization;2019-06
4. Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon;physica status solidi (RRL) – Rapid Research Letters;2019-01-21
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