MFecenter: A configurationally bistable defect in InP: Fe
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.5817/fulltext
Reference21 articles.
1. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
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5. Model for the Electronic Structure of Amorphous Semiconductors
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