Impact of fluorine doping on solution-processed In–Ga–Zn–O thin-film transistors using an efficient aqueous route
Author:
Affiliation:
1. NHK Science & Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
2. Imaging Science and Engineering Research Center, Tokyo Institute of Technology, 4259-J1-2, Nagatsuta Midori-ku, Yokohama 226-8503, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0003855
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