Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors-Reference-Cited by-同舟云学术

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Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors

Published:2022-02-26 Issue:10 Volume:9 Page:2200032
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Kim Wonsik¹,Lee Won‐June²^ORCID,Kwak Taehyun¹,Baek Seokhyeon¹,Lee Seung‐Hoon³^ORCID,Park Sungjun¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Ajou University Suwon 16499 Republic of Korea

2. School of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

3. Division of Advanced Materials Korea Research Institute of Chemical Technology (KRICT) Daejeon 34114 Republic of Korea

Funder

Korea Electric Power Corporation

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200032

Reference59 articles.

1. Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

2. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

3. Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

4. Solution Processable Metal Oxide Thin Film Deposition and Material Growth for Electronic and Photonic Devices

5. A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bias-stress-stable sub-1.5V oxide thin-film transistors via synergistic composition of sol-gel quaternary high-k oxide dielectrics;Journal of Alloys and Compounds;2024-08

2. Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration;Advanced Science;2024-05-13

3. Solution-processed IGZO field-effect transistors with a three-step laser annealing process;Journal of Materials Science: Materials in Electronics;2024-04

4. Bias-stress-stable Sub-1.5 V Oxide Thin-film Transistors via Synergistic Composition of Sol-gel Quaternary High-k Oxide Dielectrics;2024-01-30

5. A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT;Journal of Materials Chemistry C;2024

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