Flexible Metal Oxide Semiconductor Devices Made by Solution Methods-Reference-Cited by-同舟云学术

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Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

Published:2020-06-05 Issue:42 Volume:26 Page:9126-9156
ISSN:0947-6539
Container-title:Chemistry – A European Journal
language:en
Short-container-title:Chem. Eur. J.

Author:

Jo Jeong‐Wan¹²,Kang Seung‐Han¹,Heo Jae Sang³,Kim Yong‐Hoon²⁴,Park Sung Kyu¹^ORCID

Affiliation:

1. School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea

2. School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon 16419 Republic of Korea

3. Department of MedicineUniversity of Connecticut School of Medicine Farmington CT 06030 USA

4. SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University Suwon 16419 Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

Korea Evaluation Institute of Industrial Technology

Publisher

Wiley

Subject

General Chemistry,Catalysis,Organic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/chem.202000090

Reference186 articles.

1. A tin oxide field-effect transistor

2. A ferroelectric transparent thin‐film transistor

3. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

4. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

5. ZnO-based transparent thin-film transistors

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterojunction channel engineering for enhanced mobility and stability of solution-processed holmium-doped indium oxide thin film transistors;Materials Science in Semiconductor Processing;2024-12

2. Junctionless Structure Indium–Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability;ACS Applied Materials & Interfaces;2024-07-09

3. Versatile Papertronics: Photo‐Induced Synapse and Security Applications on Papers;Advanced Materials;2024-06-21

4. Novel fabrication techniques for ultra-thin silicon based flexible electronics;International Journal of Extreme Manufacturing;2024-05-24

5. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors;Nanomaterials;2024-03-04

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