A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT-Reference-Cited by-同舟云学术

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A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Published:2024 Issue:22 Volume:12 Page:8030-8041
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kumaran Saravanan¹,Karsten Bernice¹^ORCID,Zharnikov Michael²^ORCID,Tai Yian¹³^ORCID

Affiliation:

1. Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

2. Applied Physical Chemistry, Heidelberg University, 69120 Heidelberg, Germany

3. Taiwan Building Technology Center, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

Abstract

Introducing an ultrathin MgO or AlOx interlayer between the IGZO semiconductor and polymer insulator in a top-gate, bottom-contact TFT significantly improves the performance and stability of the devices.

Funder

National Science and Technology Council

Deutscher Akademischer Austauschdienst

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00705K

Reference56 articles.

1. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

2. Critical Assessment of the High Carrier Mobility of Bilayer In₂O₃/IGZO Transistors and the Underlying Mechanisms

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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