Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference38 articles.
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5. Effects of hydrogen plasma treatment on the electrical performances and reliability of InGaZnO thin-film transistors;Abliz;J. Alloy. Compd.,2020
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures;Applied Surface Science;2024-10
2. High bias stability of Hf-doping-modulated indium oxide thin-film transistors;Microelectronic Engineering;2024-03
3. Optimized responsivity of a phototransistor using graphene oxide-doped solution-processed indium oxide active layer toward neuromorphic applications;Journal of Materials Chemistry C;2024
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