Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler–Nordheim stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125203
Reference6 articles.
1. Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a flash EEPROM
2. Hole trapping, substrate currents, and breakdown in thin silicon dioxide films [ in FETs ]
3. Anode hole injection and trapping in silicon dioxide
4. Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress
5. Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface
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3. Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05
4. Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress;Journal of Applied Physics;2017-01-21
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